From the abstract:
Buried multilayer (ML) defects in EUV masks continue to pose a significant challenge to imaging fidelity and yield in 0.33 NA EUV lithography.
However, it's only going to get worse with High-NA, which collects more light from smaller defects.
Buried multilayer (ML) defects in EUV masks continue to pose a significant challenge to imaging fidelity and yield in 0.33 NA EUV lithography.
However, it's only going to get worse with High-NA, which collects more light from smaller defects.
