Intel Installs World's Most Advanced High-NA EUV Scanner for 14A Node Production
Intel Foundry has achieved a significant milestone by installing the ASML TWINSCAN EXE:5200B High-NA EUV scanner, the most advanced extreme ultraviolet (EUV) lithography machine currently available, at its manufacturing facilities. This marks a pivotal step in semiconductor manufacturing, as Intel becomes the first in the industry to transition from Low-NA to High-NA EUV lithography for its 14A process node.Breakthroughs in High-NA EUV Lithography
The TWINSCAN EXE:5200B is ASML’s second-generation High-NA EUV scanner, following the EXE:5000 model that Intel previously used for initial 14A node trials. With the new system, Intel has completed acceptance testing in collaboration with ASML, optimizing the 14A node to enhance wafer output and manufacturing efficiency.One of the most notable improvements is the reduction in process steps for certain layers—from 40 steps down to fewer than 10. This streamlining has enabled Intel to process over 30,000 wafers in a single quarter, significantly accelerating production cycle times and simplifying the overall manufacturing process.
Performance and Precision Enhancements
The TWINSCAN EXE:5200B delivers an impressive output of 175 wafers per hour under standard conditions, with Intel aiming to increase throughput to over 200 wafers per hour through further optimization. The scanner also sets a new standard for overlay precision, achieving alignment accuracy between lithography layers down to 0.7 nanometers. This level of precision is critical for producing advanced semiconductor devices with higher performance and yield.Intel’s experience with High-NA EUV technology began in 2023, when it installed the industry’s first commercial High-NA tool at its Oregon research and development site. Building on this foundation, Intel is now shipping 14A PDK 0.5 to customers, who have expressed strong satisfaction with the node’s progress. According to Intel, the 14A node is already demonstrating superior yield and performance metrics compared to the earlier 18A node at a similar stage of development.
Scaling Up for Future Demand
Looking ahead, Intel plans to begin high-volume manufacturing of the 14A node in 2027. Customer interest in the new technology is high, but as with any new fabrication partnership, concerns remain regarding security and sufficient wafer capacity. To meet growing demand and ensure reliable supply, Intel will need to invest in additional advanced High-NA EUV machines to expand its production capabilities.While the current capacity of processing 30,000 wafers per quarter is adequate for a limited number of clients, scaling up will be essential for broader foundry services. In parallel, Intel will continue to produce its 18A node, which utilizes Low-NA EUV technology, in various versions to help balance capacity and meet diverse customer requirements.
Intel’s adoption of the TWINSCAN EXE:5200B High-NA EUV scanner represents a major leap forward in semiconductor manufacturing, setting new benchmarks for efficiency, precision, and scalability in advanced node production.
Intel Installs ASML TWINSCAN EXE:5200B High-NA EUV System for 14A Process Node
Intel Foundry has installed ASML's cutting-edge TWINSCAN EXE:5200B High-NA EUV scanner to produce its advanced 14A node, marking the industry's first shift from Low-NA to High-NA EUV lithography and achieving major gains in wafer output, manufacturing efficiency, and overlay precision as it...
hi.whatpsu.com
