As we are migrating to smaller features and thinner materials in the 7nm era, the requirements for RF Plasma control is critical in a process chamber either it be for etching or deposition to ensure good LER, HAR, CDU and other wafer yield impacting variations.

Are there any critical issues that a process team faces today in terms of RF power control and matching on a process chamber in the fab and wishing they had certain controls that they do not have access today for managing the RF plasma process activities? If so what would the wish list look like?