For a die containing billions of transistors...typically how many masks are used to the whole SOC to be photolithographed on Silicon
| You are currently viewing SemiWiki as a guest which gives you limited access to the site. To view blog comments and experience other SemiWiki features you must be a registered member. Registration is fast, simple, and absolutely free so please, join our community today!
|
For a die containing billions of transistors...typically how many masks are used to the whole SOC to be photolithographed on Silicon
Rule of thumb: #metals*2 + 20. For each metal layer you need a mask for the via layer and one for the metal layer. I think current nodes have 10 or more metal layers. The 20 extra masks is for poly, active area and all the well and diffusion implantation steps; also some masks for passivation but they are cheap. The exact number depends on the process and on the options used (low-Vt, triple well, ...).
Trust me ...
I know what I am doing.
So I believe all these masks are created from the gds.. One quick question how are these masks created from the gds as in how is the footprint of the design translated on to the mask
Here's a good presentation on going from GDS II to a mask: http://snf.stanford.edu/Process/Mask...cs-General.pdf
The number of masks is based on the technology the SOC is a product of. Here's a more interesting question: What is the number of steps in a process to produce a high yielding SOC?
Elle,
I'll guess that there are hundreds to thousands of processing steps.
I was considering litho as a single step even though there is all the substeps involved. Yea.. talk about baking chips! Whew!
As for GDSII .. what you see is not what you get! The mask prep team will size up and down certain layers based on certain criteria all for purposes of conforming to manufacturability. It's really amazing that all this work actually produces a functioning circuit at the end of the day!
Trust me ...
I know what I am doing.