With double patterning for minimum dimension layers, the no of mask layers will increase (for poly and M1/M2 layers).
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With double patterning for minimum dimension layers, the no of mask layers will increase (for poly and M1/M2 layers).
The number of mask layers have increased for the base layers (from OD -> M1) for 22nm processes too but not due to double patterning.
Does anyone know if there any documentation on processes using double patterns that layout designers could review before embarking on layout design in these processes? There is a steep learning curve for layout designers.